Huihui Zhu

Huihui Zhu is dedicated to developing p-type semiconductors that can rival and integrate seamlessly with n-type oxide technologies, enabling the next generation of fully complementary, high-performance electronics. This is crucial for truly enabling complementary circuits in which n-type and p-type transistors work together. While n-type oxide materials have made significant progress, the development of p-type materials has lagged behind, becoming a key bottleneck hindering industry development. Her research focuses on two material systems: tin-iodide-based perovskites and amorphous oxide semiconductors. Through synergistic innovation in material design, synthesis, and device physics, she has achieved significant breakthroughs in the performance of p-type transistors.

In her research on tin-iodide-based perovskites, she has employed strategies like anion engineering and A-site cation engineering to enhance device stability. Using a chemical solution-based interface composition engineering technique, she developed p-type transistors with a hole mobility exceeding 70 cm²/V·s, rivaling commercial low-temperature polysilicon.

Her team achieved a landmark breakthrough in amorphous oxide semiconductors, long considered the "missing half" of oxide electronics. By integrating tellurium into an amorphous oxide tellurium (TeOₓ) matrix and employing a selenium alloying strategy, they successfully fabricated high-performance p-type amorphous oxide semiconductors for the first time. The material exhibits a hole mobility as high as 15 cm²/V·s in its amorphous state, coupled with excellent uniformity and stability, resolving the long-standing shortage of p-type materials in oxide electronics.